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| SIDC14D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: * 600V EMCON 3 technology 70 m chip * soft, fast switching * low reverse recovery charge * small temperature coefficient A This chip is used for: * power module * discrete components Applications: * drives C Chip Type SIDC14D60C6 VR 600V IF 50A Die Size 4.6 x 3.05 mm2 Package sawn on foil Ordering Code Q67050-A4352A101 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject ink dot size Recommended storage environment 4.6 x 3.05 14.03 / 11.12 3.9 x 2.35 70 150 180 1013 pcs Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm deg mm 2 Edited by INFINEON Technologies AI PS DD CLS, L4561M, Edition 1, 18.06.2004 SIDC14D60C6 Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM IF I FSM IFRM Tj , Ts t g Condition Value 600 1) Unit V tP = 10 ms sinusoidal tbd 150 -40...+175 A Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature 1) C depending on thermal properties of assembly Static Electrical Characteristics (tested on chip), Tj=25 C, unless otherwise specified Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R = 600V I R = 0 . 2 5 mA I F = 50 A Tj= 2 5 C Tj= 2 5 C Tj= 2 5 C 600 1.2 1.6 1.9 Value min. Typ. max. 350 Unit A V V Dynamic Electrical Characteristics (verified by design/characterization), inductive load Tj = 25 C, unless otherwise specified Parameter Reverse recovery time Symbol t rr1 t rr2 Peak recovery current IRRM1 IRRM2 Reverse recovery charge Qrr1 Qrr2 Peak rate of fall of reverse di r r 1 /dt recovery current di r r 2 /dt Softness S1 S2 2) Conditions I F = 50A d i / d t = t b dA/s V R =300V I F = 50A d i / d t = t b dA/s V R =300V I F = 50A d i / d t = t b dA/s V R =300V I F = 50A d i / d t = t b dA/s V R =300V I F = 50A d i / d t = t b dA/s V R =300V Value min. Typ. tbd tbd tbd 2) max. Unit T j = 25 C Tj = 125 C T j = 25 C Tj = 125 C Tj= 2 5 C Tj= 1 2 5 C T j = 25 C Tj= 1 2 5 C Tj= 2 5 C Tj= 1 2 5 C ns A tbd tbd C tbd tbd tbd tbd tbd 1 A / s values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD CLS, L4561M, Edition 1, 18.06.2004 SIDC14D60C6 CHIP DRAWING: Edited by INFINEON Technologies AI PS DD CLS, L4561M, Edition 1, 18.06.2004 SIDC14D60C6 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD CLS, L4561M, Edition 1, 18.06.2004 |
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